WBG Data Bank

This page contains a compilation of the most recent data known to the webmaster on several WBG topics that are evolving rapidly. These data will be updated regularly, whenever new information becomes available.

WBG Power Device Performance: A plot of blocking voltage versus on-resistance for WBG power devices, and a table listing the best performance figures reported to date. Devices include Schottky diodes, PiN diodes, power MOSFETs, JFETs, BJTs, HEMTs, and thyristors. Figures of merit include blocking voltage, specific on-resistance, and the power device figure-of-merit (V_B²/R_on).

Ohmic Contact Resistance: Plots of lowest reported contact resistance for ohmic contacts to n-type and p-type 6H-SiC as a function of epilayer doping. N-type contacts are annealed nickel, while p-type contacts are annealed Al/Ti or CoSi.

Ion Implant Activation: Plots of lowest reported sheet resistivity of n-type (nitrogen) and p-type (aluminum) ion implanted layers in 6H-SiC.

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