Best Reported WBG Power Device Performance

(Updated June 6, 2004)



Figure 1. Progress in blocking voltage of SiC power MOSFETs. Only those devices with the highest blocking voltages at a given point in time are included in this plot. The solid line represents an increase of 75 percent per year.

Figure 2. Specific on-resistance (resistance-area product) and blocking voltage for wide bandgap power transistors reported to date. Black and red diagonal lines are the theoretical limits for silicon and 4H-SiC unipolar devices, respectively. Red symbols are SiC MOSFETs, blue symbols are SiC JFETs, green symbols are SiC BJTs, and black symbols are GaN HEMTs. The asterisks indicate normally-on devices. (The figures quoted for the GaN HEMT are for the version with Si3N4 passivation.)

Figure 3. Absolute on-current vs blocking voltage for representative SiC power devices reported as of 2004. Shaded regions indicate the performance envelope of each type of device.

Table 1(below). Best reported performance numbers for wide band gap power devices, listed in order of increasing figure-of-merit VB2/RON. This figure has a theoretical maximum value of about 2,000 MW/cm2 in 4H-SiC. Due to conductivity modulation of the drift region, bipolar transistors and JFETs can have values of VB2/RON greater than 2,000 MW/cm2.


DIODES
Device
Blocking
Voltage
(kV)
Specific
On-Resistance
(mOhm-cm2)
VB2/RON
(MW/cm2)
Reference
MPS Diode (4H)
1.5
10
225

Cree, Inc.

MPS Diode (4H)
1.8
6.7
483

Rutgers/USCI

Schottky Diode (4H)
4.9
43
558

Purdue Univ.

JBS Diode (4H)
2.8
8
980

KTH / ABB

Schottky Diode (4H)
10.8
97
1202

Rutgers Univ.

PiN Diode (4H)
10
3.7 V @
100 A/cm2
--

Cree, Inc.

PiN Diode (4H)
19.2
7.5 V @
100 A/cm2
--

Kansai EP / Cree




MOSFETs
Device
Blocking
Voltage
(kV)
Specific
On-Resistance
(mOhm-cm2)
VB2/RON
(MW/cm2)
Reference
UMOS ACCUFET (4H)
0.45
10.9
18.6

Denso Corp.

SIAFET (4H)
6.1
732
50.8

Kansai EP / Cree

SIAFET (4H)
4.58
387
54

Kansai EP / Cree

DMOSFET (6H)
1.8
46
70

Siemens AG

UMOSFET (4H)
3.06
121
77

Purdue

UMOS ACCUFET (4H)
1.4
15.7
125

Purdue

UMOSFET (4H)
5.05
105
243

Purdue

DMOSFET (4H)
7.0
189
259

Cree, Inc.

SEMOSFET (4H)
5.0
88
284

Kansai EP / Cree

DMOSFET (4H)
10
123
813

Cree, Inc.




JFETs and HEMTs
Device
Blocking
Voltage
(kV)
Specific
On-Resistance
(mOhm-cm2)
VB2/RON
(MW/cm2)
Reference
JFET (4H)
5.5
218
139

Kansai EP / Cree

JFET (4H)
4.45
121
164

Kansai EP / Cree

GaN HEMT
(normally-on)
1.1
4.9
263

UCSB / Yale

SEJFET (4H)
5.0
69
362

Kansai EP / Cree

JFET (4H)
4.3
40
471

Rutgers/USCI

JFET (4H)
(normally on)
3.5
25
490

SiCED

TI-VJFET (4H)
11
168
720

Rutgers/USCI

JFET (4H)
1.7
3.6
828

Rutgers Univ.





BJTs and GTOs
Device
Blocking
Voltage
(kV)
Specific
On-Resistance
(mOhm-cm2)
VB2/RON
(MW/cm2)
Reference
BJT (4H)
3.2
78
131

Purdue

BJT (4H)
1.8
7.0
463

Cree, Inc.

BJT (4H)
9.28
49
1759

Rutgers/USCI

GTO (4H)
3.1
4.97 V
@12 A
power rating
62 kW

Cree, Inc.


Do you know of better performance figures for a WBG power switching device? If so, please send e-mail to

webmaster-wbg@ecn.purdue.edu

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