Best Reported Sheet Resistivity
of Ion Implanted SiC

Revised February 2, 1997

Figure 1. Sheet resistivity of nitrogen implants into 6H silicon carbide at room tmperature. Implant and anneal conditions are given in the figure. Resistivity is measured at room temperature. Note that the implant doses and energies for the different data sets are not identical -- consult the references for details.

Figure 2. Sheet resistivity of aluminum implants into 6H silicon carbide at room tmperature. Implant and anneal conditions are given in the figure. Resistivity is measured at room temperature, and a significant fraction of the aluminum dopants are not ionized at room temperature.

Do you know of better sheet resistivities for ion implants into SiC? If so, please send e-mail to

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