Facilities

(Updated July 20, 2001)

The Solid-State Device and Materials Laboratory at Purdue University comprises approximately 8000 sq. ft. of fabrication space. The following is a summary of the facilities available:

Oxidation, Diffusion, and CVD Deposition

SiC Processing:
Tempress 3-inch tubes for wet/dry oxidation and LPCVD polysilicon deposition.
Two Thermco "Mini-Brute" furnaces for pyrogenic oxidation (hydrogen burn).
Silicon Processing:
Tempress tubes: wet/dry oxidation, HCL oxidation, pyrogenic oxidation, boron deposition, boron drive, phosphorus deposition, phosphorus drive, metallization anneal, LPCVD polysilicon deposition, LPCVD nitride deposition.

Epitaxy

Epigress VP 508 dual-chamber hot-wall CVD reactor for epigrowth of SiC, capable of temperatures up to 2000 C. The system is also used for high-temperature processing (e.g. silane annealing, hydrogen annealing, etc.) of SiC device structures.
Aixtron AIX 200/4 MOCVD system for low-temperature SiC and III-V nitride epigrowth.
Varian GEN-II MBE devoted to III-V material growth.
Perkin-Elmer analytical equipment including RHEED, an ESCA/XPS system with monochromatic X-ray source and hemispherical analyzer, and an in-situ Auger system.
Gemini-I LPCVD epitaxial reactor, used for selective epitaxial growth (SEG) of silicon and epitaxial lateral overgrowth (ELO) of silicon over insulators.

Film Deposition

Varian E-beam evaporator (Au, Ge, Ni, Ti).
Airco E-beam evaporator (Au, Ge, Ni, Ti, Mo, In).
Two NRC filament evaporators (various metals).
Perkin-Elmer 3140 sputtering system.
Perkin-Elmer 240 magnetron sputtering system.
MRC 8620 sputtering system (Si₃N₄, Ni).
Technics PD-II PECVD deposition system (Si₃N₄, SiO₂, a-Si).

Ion Implantation

Accelerators, Inc. AM-210 (200 kV) ion implanter.
Varian DF-3000 (200 kV) ion implanter.

Annealing

Kurt Leskar custom-designed dual-chamber vacuum system for annealing ohmic contacts to SiC.
Two variable temperature thermal annealing furnaces.
AG Associates Mini-Pulse rapid thermal processor.
Lindberg 1700 °C tube furnace for SiC.

Lithography

Leica EBMF-2.5 direct-write-on-wafer electron beam exposure machine, capable of 0.2 µm lines in resist. The EBMF is also used to make optical photomasks which require near-micron dimensions.
Electro-Mask 10:1 step and repeat system.
Two Karl Suss MJB-3 optical mask aligners (capable of sub-micron resolution).
Kasper 17 A optical mask aligner.
Two Cobilt CA800 optical mask aligners.

Dry Etching

Millitron ion milling machine.
PC Model 2000 plasma etching system.
Branson/IPC Model 3000 barrel-type plasma etching system.
Dry-Tek plasma etching system.
Dry-Tek RIE system.
Plasma Technology Plasmalab modular RIE system.
Two HP plasma ashers.

Microscopy

Zeiss, Unitron, and Leitz optical microscopes.
Olympus Nomarski microscope with color video capture.
Cambridge Stereoscan 90B scanning electron microscope.
Several scanning electron microscopes (SEMs) and transmission electron microscopes (TEMs) in Material Science laboratories.

Film Evaluation - Physical

Dektak surface profilometer.
Tencor Alphastep surface profilometer.
Sloan angstrometer.
Rudolph Research 43603-200E ellipsometer.
powder diffractometer (Material Science).
X-ray double crystal monochrometer for X-ray rocking curves.

Film and Device Evaluation - Optical

Complete photoluminescence facility.
Oriel quantum efficiency measurement system.

Film and Device Evaluation - Electrical

Three Micromanipulator probe stations with heated chucks capable of 300 -- 673 K.
Blue-M convection oven capable of temperatures from 300 -- 977 K.
77 K Hall-effect facility.
2 K Hall-effect system for S-dH measurements (Physics).
Polaron DLTS measurement system.
Unicorp 1900 semi-automatic four point probe.
Two MSI Electronics 868 semi-automatic CV plotters.
Keithley integrated Hi-Lo CV measurement system.
HP 4274A LCR meter (100 Hz - 100 kHz).
HP 4275A LCR meter (10 kHz - 10 MHz).
HP 4284A precision LCR meter
HP 4140B picoammeter.
Two HP 4145A semiconductor parameter analyzers.
Two HP 4156A semiconductor parameter analyzers.
Tektronix 11401 digitizing oscilloscope.
Tektronix 371A automated high-voltage, high-current curve tracer.
Air Products closed-cycle environmental chamber capable of temperatures from 10 -- 300 K.

Device Evaluation - RF and µW

HP 851B spectrum analyzer.
Tektronix 2755 spectrum analyzer (operation to 325 GHz).
HP 8505A network analyzer.
HP 8503A S-parameter test set.

Device and Process Simulation

Dedicated workstations for:
TMA SUPREM-4 Fabrication Process Simulator
TMA MEDICI Electrical Circuit Emulator
Drawn Technologies PISCES

Microstructural Analysis Facilities

JEOL 200 CX
JEOL 2000FX with parallel EELS and EDS detectors
SEMs with EDS detectors; thin-window EDS port, image processing and analysis
Physical Electronics model 590 Scanning Auger System
Physical Electronics model 548 ESCA System

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