Publications on WBG Research

(Updated September 28, 2003)

Table of Contents
(In each grouping, publications are listed in reverse chronological order.)

Masters and Doctoral Theses (29)
Publications on SiC Power Switching Devices (47)
Publications on SiC Microwave Devices (9)
Publications on SiC Integrated Circuits (10)
Publications on SiC Material Science (12)
Publications on SiC MOS Characterization (34)
Publications on SiC MOS Transistors (11)
Publications on SiC Charge Coupled Devices (6)
Publications on SiC Nonvolatile Memory (16)
Publications on SiC Velocity-Field Measurements (5)

Masters and Doctoral Theses

  1. C.-Y. Lu, "Design and Fabrication of High Performance UMOSFETs in 4H-SiC," Ph.D. Thesis, Purdue University, December 2003.

  2. M. Matin, "4H SiC Power DMOSFETs," Ph.D. Thesis, Purdue University, December 2002.

  3. I. A. Khan, "High Voltage SiC UMOSFETs," Ph.D. Thesis, Purdue University, May 2002.

  4. Y. Li, "Modeling, Design and Fabrication of High Performance UMOSFETs on 4H-SiC for Power Switching Applications," Ph.D. Thesis, Purdue University, June 2001.

  5. D. T. Morisette, "Development of Robust Power Schottky Barrier diodes in Silicon Carbide," Ph.D. Thesis, Purdue University, May 2001.

  6. J. Spitz, "Lateral Power MOSFETs in Silicon Carbide," Ph.D. Thesis, Purdue University, May 2001.

  7. B. Johnson, "The Role of Titanium in Titanium/Aluminum Contacts to P-Type Silicon Carbide," M.S. Thesis, Purdue University, May 2001.

  8. L. Yuan, "Development of Silicon Carbide IMPATT Oscillators," Ph.D. Thesis, Purdue University, December 2000.

  9. S. Lee, "Microwave Distributed Power Amplifiers Using Gallium Nitride and Silicon Carbide Transistors," M.S. Thesis, Purdue University, August 2000.

  10. A. Przadka, "High Frequency, High Power Static Induction Transistors in Silicon Carbide: Simulation and Fabrication," Ph.D. Thesis, Purdue University, December 1999.

  11. M. K. Das, "Fundamental Studies of the Silicon Carbide MOS Structure," Ph.D. Thesis, Purdue University, December 1999.

  12. J. P. Henning, "The Design and Development of High Frequency, High Power Static Induction Transistors in 4H-Silicon Carbide," Ph.D. Thesis, Purdue University, August 1999.

  13. J. Tan, "An Optimized SiC Power UMOSFET," Ph.D. Thesis, Purdue University, August 1998.

  14. M-P. Lam, "Development of Submicron CMOS in 6H-SiC," Ph.D. Thesis, Purdue University, May 1998.

  15. I. A. Khan, "Velocity Field Measurements of Electrons in Silicon Carbide," M.S. Thesis, Purdue University, May 1998.

  16. S. Dastidar, "A Study of P-Type Activation in Silicon Carbide," M.S. Thesis, Purdue University, May 1998.

  17. M. Mathur Maranowski, "An Investigation into the Reliability of the Silicon Dioxide / Silicon Carbide Material System," Ph.D. Thesis, Purdue University, May 1998.

  18. M. Matin, "Fabrication and Characterization of 6H Silicon Carbide DMOS Transistors," M.S. Thesis, Purdue University, December 1997.

  19. S.-H. Ryu, "Development of CMOS Technology for Smart Power Applications in Silicon Carbide," Ph.D. Thesis, Purdue University, May 1997.

  20. K. J. Schoen, "Power and High Temperature Schottky Rectifiers," Ph.D. Thesis, Purdue University, May 1997.

  21. J. P. Henning, "Study of the Electronic Properties of Polycrystalline Silicon on 4H Silicon Carbide," M.S. Thesis, Purdue University, May 1997.

  22. J. N. Shenoy, "Basic MOS Studies for Silicon Carbide Power Devices," Ph.D. Thesis, Purdue University, December 1996.

  23. N-H. Pan, "Development of Self-Aligned Polysilicon-Gate MOSFETs in 6H Silicon Carbide," Ph.D. Thesis, Purdue University, August 1996.

  24. Y. Wang, "Analysis and Optimization of Bipolar Nonvolatile Random Access Memory Cells in 6H Silicon Carbide," Ph.D. Thesis, Purdue University, May 1996.

  25. W. Xie, "The Development of Nonvolatile Random Access Memory in 6H Silicon Carbide," Ph.D. Thesis, Purdue University, December 1995.

  26. S. T. Sheppard, "Development and Operation of Buried Channel Charge Coupled Devices in 6H Silicon Carbide," Ph.D. Thesis, Purdue University, August 1995. (Also available as technical report TR-ECE 96-8).

  27. J. W. Sanders, "MOS Characterization of Thermally Oxidized Silicon Carbide (6H)," M.S. Thesis, Purdue University, December 1993.

  28. S. S. Kalpat, "Reactive Ion Etching of SiC," M.S. Thesis, Purdue University, August 1993.

  29. C. T. Gardner, "Electrical Characterization of NiPiN Structures in 6H-SiC," M.S. Thesis, Purdue University, December 1991.

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Publications on SiC Power Switching Devices

  1. M. Matin, A. Saha, and J. A. Cooper, Jr., "Self-Aligned Short-Channel Vertical Power DMOSFETs in 4H-SiC, " International Conference on Silicon Carbide and Related Materials , Lyon, France, October 5 - 10, 2003.

  2. X. Wang and J. A. Cooper, Jr., "Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC," International Conference on Silicon Carbide and Related Materials , Lyon, France, October 5 - 10, 2003.

  3. J. A. Cooper, Jr., "Effect of Process Induced Defects on SiC Power Device Performance," Tri-Services/DARPA on Process Induced Defects in Wide Bandgap Semiconductors , Grants Pass, OR, August 17-21, 2003.

  4. C.-F. Huang and J. A. Cooper, Jr., "High Current Gain 4H-SiC NPN Bipolar Junction Transistors," IEEE Electron Device Letters , Vol. 24, No. 6, pp. 396-398, June, 2003.

  5. D. T. Morisette and J. A. Cooper, Jr., "Impact of Material Defects on SiC Schottky Barrier Diodes," Materials Science Forum , Vols. 389-393, pp. 1133-1136, 2002.

  6. D. T. Morisette and J. A. Cooper, Jr., "High-Voltage Pulse Instabilities in SiC Schottky Barrier Diodes with Implanted Resistive Edge Terminations, " Materials Science Forum , Vols. 389-393, pp. 1157-1160, 2002.

  7. D. T. Morisette and J. A. Cooper, Jr., "Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter Space," Materials Science Forum, Vols. 389-393, pp. 1181-1184, 2002.

  8. Y. Li, J. A. Cooper, Jr., and M. A. Capano, "High-Performance UMOSFETs in 4H-SiC," Materials Science Forum , Vols. 389-393, pp. 1191-1194, 2002.

  9. D. T. Morisette and J. A. Cooper, Jr., "Theoretical Performance Comparison of SiC PiN and Schottky Diodes," IEEE Transactions on Electron Devices , Vol. 49, No. 9, pp. 1657-1664, September, 2002.

  10. C-F. Huang and J. A. Cooper, Jr., "High Performance Power BJTs in 4H-SiC," IEEE Lester Eastman Conference on High Performance Devices , Newark, DE, August 6 -- 8, 2002.

  11. C.-F. Huang and J. A. Cooper, Jr., "4H-SiC Power Bipolar Transistors with Common Emitter Current Gain > 50," IEEE Device Research Conference , Santa Barbara, CA, June 24 - 26, 2002.

  12. C.-F. Huang and J. A. Cooper, Jr., "4H-SiC NPN Bipolar Junction Transistors with BVCEO> 3,200 V," International Symposium on Power Semiconductor Devices , Santa Fe, NM, June 3 -7, 2002.

  13. I. A. Khan, J. A. Cooper, Jr., M. A. Capano, T. Isaacs-Smith, and J. R. Williams, "High-Voltage UMOSFETs in 4H-SiC," International Symposium on Power Semiconductor Devices , Santa Fe, NM, June 3 -7, 2002.

  14. Y. Li, J. A. Cooper, Jr., and M. A. Capano, "High-Voltage (3 kV) UMOSFETS in 4H-SiC, " IEEE Transactions on Electron Devices , Vol. 49, No. 6, pp. 972-975, June 2002.

  15. J. A. Cooper, Jr. and A. Agarwal, "SiC Power Switching Devices: The Second Electronics Revolution," [INVITED] Proceedings of the IEEE , Vol. 90, No. 6, pp. 956-968, June, 2002.

  16. J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J. W. Palmour, "Status and Prospects for SiC Power MOSFETs," IEEE Transactions on Electron Devices , Vol. 49, No. 4, pp. 658-663, April, 2002.

  17. R. Singh, J. A. Cooper, Jr., M. R. Melloch, T. P. Chow, and J. W. Palmour, "SiC Power Schottky and PiN Diodes," IEEE Transactions on Electron Devices, Vol. 49, No. 4, pp. 665-672, April, 2002.

  18. Y. Li, J. A. Cooper, Jr., and M. A. Capano, "High Performance UMOSFETs on 4H-SiC," International Conference on Silicon Carbide and Related Materials , Tsukuba, Japan, October 28 - November 2, 2001.

  19. D. T. Morisette and J. A. Cooper, Jr., "High-Voltage Pulse Instabilities in SiC Schottky Diodes with Resistive Edge Terminations, " International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, October 28 - November 2, 2001.

  20. D. T. Morisette and J. A. Cooper, Jr., "Theoretical Performance Comparison of SiC PiN and Schottky Barrier Diode," International Conference on Silicon Carbide and Related Materials, Tsukuba, Japan, October 28 - November 2, 2001.

  21. D. T. Morisette and J. A. Cooper, Jr., "Impact of Material Defects on SiC Schottky Barrier Diodes," International Conference on Silicon Carbide and Related Materials , Tsukuba, Japan, October 28 - November 2, 2001.

  22. J. A. Cooper, Jr., "Opportunities and Technical Strategies for SiC Device Development", [PLENARY] International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001.

  23. D. T. Morisette and J. A. Cooper, Jr., "Impact of Material Defects on SiC Schottky Barrier Diodes," 43rd Electronic Materials Conference, South Bend, IN, June 27-29, 2001.

  24. D. T. Morisette, J. M. Woodall, J. A. Cooper, Jr., M. R. Melloch, G. M. Dolny, P. M. Shenoy, M. Zafrani, and J. Gladish, "Static and Dynamic Characterization of Large Area High-Current-Density SiC Schottky Diodes," IEEE Transactions on Electronic Devices, Vol. 48, No. 2, pp. 349-352, February, 2001.

  25. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., G. Melnychuk, and S. E. Saddow, "2.7 kV Epitaxial Lateral Power DMOSFETs in 4H-SiC," IEEE Device Research Conference, Denver, CO, June 19-21, 2000.

  26. J. A. Cooper, Jr., "Design and Development of Silicon Carbide High-Frequency Power Devices," [INVITED] 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), Nara, JAPAN, May 31 - June 2, 2000.

  27. J. A. Cooper, Jr. and M. R. Melloch, "SiC Devices for High-Frequency Power Switching Applications," [INVITED] GOMAC-2000, Anaheim, CA, March 20 - 23, 2000.

  28. J. A. Cooper, Jr., "A Comparison of SiC Schottky and PiN Diodes for High Frequency Switching Applications," Workshop on Compound Semiconductor Devices and Materials (WOCSEMMAD '00), San Diego, CA, February 21 - 23, 2000.

  29. H. M. McGlothlin, D. T. Morisette, J. A. Cooper, Jr., and M. R. Melloch, "4 kV Silicon Carbide Schottky Diodes for High-Frequency Switching Applications," IEEE Device Research Conference, Santa Barbara, CA, June 28 - 30, 1999.

  30. J. A. Cooper, S-H. Ryu, Y. Li, M. Matin, J. Spitz, D. T. Morisette, H. M. McGlothlin, M. K. Das, M. R. Melloch, M. A. Capano, and J. M. Woodall, "SiC Power Electronic Devices, MOSFETs and Rectifiers," [INVITED] MRS Spring Meeting 99, San Fransisco, CA, April 5 - 9, 1999.

  31. J. A. Cooper, "State-of-the-Art SiC MOSFETs as an Alternative to Bipolar Devices for Power Switching Applications," Workshop on Wide Bandgap Bipolar Devices, Panama City Beach, FL, January 25-28, 1999.

  32. J. A. Cooper, Jr., "Advances in Silicon Carbide Power Switching Devices," PowerSystems World Conference 98, Santa Clara, CA, November 7 - 13, 1998.

  33. J. Tan, J. A. Cooper, Jr., and M. R. Melloch, "High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC," IEEE Electron Device Letters, Vol. 19, No. 12, pp. 487-489, December, 1998.

  34. K. J. Schoen, J. M. Woodall, J. A. Cooper, Jr., and M. R. Melloch, "Design Considerations and Experimental Characterization of High Voltage SiC Schottky Barrier Rectifiers," IEEE Transactions on Electron Devices, Vol. 45, No. 7, pp. 1595-1604, July, 1998.

  35. J. Tan, J. A. Cooper, Jr. and M. R. Melloch, "High-Voltage Accumulation-Layer UMOSFETs in 4H-SiC," IEEE Device Research Conference, Charlottesville, VA, June 22 - 24, 1998.

  36. G. M. Dolney, D. T. Morisette, P. M. Shenoy, M. Zafrani, J. Gladish, J. M. Woodall, J. A. Cooper, Jr., and M. R. Melloch, "Static and Dynamic Characterization of Large-Area High-Current-Density SiC Schottky Diodes," IEEE Device Research Conference, Charlottesville, VA, June 22 - 24, 1998.

  37. J. A. Cooper, Jr., "Silicon Carbide Device Development: Opportunities and Challenges," [PLENARY] International Workshop on Hard Electronics,Tsukuba, Japan, February 3-4, 1998.

  38. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano, "High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC," IEEE Electron Device Letters, Vol. 19, No. 4, pp. 100-102, April, 1998.

  39. J. P. Henning, K. J. Schoen, M. R. Melloch, J. M. Woodall, and J. A. Cooper, Jr., "Electrical Characteristics of Rectifying Polycrystalline Silicon / Silicon Carbide Heterojunctions," Journal of Electronic Materials, Vol. 27, No. 4, pp. 296-299, April, 1998.

  40. K. J. Schoen, J. P. Henning, J. M. Woodall, J. A. Cooper, Jr., and M. R. Melloch, "A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC, " IEEE Electron Device Letters, Vol. 19, No. 4, pp. 97-99, April, 1998.

  41. J. Spitz, M. R. Melloch, J. A. Cooper, Jr., and M. A. Capano,"High-Voltage Lateral DMOSFETs in 4H-SiC," (late news) Int'l. Conf. on Silicon Carbide and III-Nitrides, Stockholm, Sweden, Aug. 31-Sept. 5, 1997.

  42. K. J. Schoen, J. P. Henning, J. M. Woodall, J. A. Cooper, Jr., and M. R. Melloch, "A Dual-Metal-Trench (DMT) Schottky Pinch-Rectifier in 4H-SiC," (poster) Int'l. Conf. on Silicon Carbide and III-Nitrides, Stockholm, Sweden, Aug. 31-Sept. 5, 1997.

  43. J. A. Cooper, Jr.,"SiC Power Device Technology," (INVITED) Int'l. Conf. on Silicon Carbide and III-Nitrides, Stockholm, Sweden, Aug. 31-Sept. 5, 1997.

  44. J. Spitz, M. R. Melloch, and J. A. Cooper, Jr.,"2.6 kV 4H-SiC Power MOSFET," (late news) IEEE Device Research Conference, Ft. Collins, CO, June 23-25, 1997.

  45. J. A. Cooper, Jr., "Development of Fabrication Technology for MOS-Based Power Switching Devices in Silicon Carbide," (INVITED) SAE Aerospace Power Systems Conference, Williamsburg, VA, April 9-11, 1997.

  46. J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch,"High-Voltage Double-Implanted Power MOSFETs in 6H-SiC," IEEE Electron Device Letters, Vol. 18, pp. 93 - 95, March 1997.

  47. J. N. Shenoy, M. R. Melloch, and J. A. Cooper, Jr., "High-Voltage Double-Implanted MOS Power Transistors in 6H-SiC," (late news) IEEE Device Research Conference, Santa Barbara, CA, June 24-26, 1996.

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Publications on SiC Microwave Devices

  1. L. Yuan, J. A. Cooper, Jr., K. J. Webb, and M. R. Melloch, "Demonstration of IMPATT Diode Oscillators in 4H-SiC," Materials Science Forum , Vols. 389-393, pp. 1359-1362, 2002.

  2. L. Yuan, J. A. Cooper, Jr., K. J. Webb, and M. R. Melloch, "Demonstration of IMPATT Diode Oscillators in 4H-SiC,"International Conference on Silicon Carbide and Related Materials , Tsukuba, Japan, October 28 - November 2, 2001.

  3. L. Yuan, M. R. Melloch, J. A. Cooper, Jr., and K. J. Webb, "An X-Band Silicon Carbide IMPATT Diode," 59th Annual Device Research Conference, South Bend, IN, June 25-27, 2001.

  4. L. Yuan, J. A. Cooper, Jr., M. R. Melloch, and K. J. Webb, "Experimental Demonstration of a Silicon Carbide IMPATT Oscillator," IEEE Electron Device Letters, Vol. 22, No. 6, pp. 266-268, June, 2001.

  5. J. P. Henning, A. Przadka, M. R. Melloch, and J. A. Cooper, Jr., "A Novel Self-Aligned Fabrication Process for Microwave Static Induction Transistors in Silicon Carbide," IEEE Electron Device Letters, Vol. 21, No. 12, pp. 578--580, December, 2000.

  6. L. Yuan, M. R. Melloch, J. A. Cooper, and K. J. Webb, "Silicon Carbide IMPATT Oscillators for High-Power Microwave and Millimeter-Wave Generation," IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, August 7-9, 2000.

  7. J. A. Cooper, Jr., "Design and Development of Silicon Carbide High-Frequency Power Devices," [INVITED] 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), Nara, Japan, May 31 - June 2, 2000.

  8. J. P. Henning, A. Przadka, M. R. Melloch, and J. A. Cooper, Jr., "Design and Demonstration of C-Band Static Induction Transistors in 4H Silicon Carbide," IEEE Device Research Conference, Santa Barbara, CA, June 28 - 30, 1999.

  9. J. A. Cooper, J. Henning, A. Przadka, and M. R. Melloch, "SiC Static Induction Transistors for Power Amplification at C-Band and X-Band," [INVITED] Symposium of Static Induction Devices (SSID 99), Tokyo, Japan, April 23, 1999.

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Publications on SiC Integrated Circuits

  1. S. Ryu, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, " Digital CMOS ICs in 6H-SiC Operating on a 5V Power Supply," IEEE Transactions on Electron Devices, Vol. 45, No. 1, pp. 45-53, January 1998.

  2. S. Ryu, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, " 6H-SiC CMOS Digital ICs Operating on a 5V Power Supply," IEEE Device Research Conference, Ft. Collins, CO, June 23-25, 1997.

  3. S. Ryu, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch," Monolithic CMOS Digital Integrated Circuits in 6H-SiC Using an Implanted P-Well Process,"IEEE Electron Device Letters, Vol. 18, pp. 194-196, May 1997.

  4. M. P. Lam, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, "Ion Implant Technology for 6H-SiC MESFET Digital IC's," IEEE Device Research Conference, Santa Barbara, CA, June 24-26, 1996.

  5. W. Xie, J. Pan, J. A. Cooper, Jr., and M. R. Melloch, "Monolithic Digital Integrated Circuits in 6H-SiC," Inst. Phys. Conf. Ser., No. 141, Ch. 4, pp. 455-458, 1995.

  6. M-P. Lam, K. T. Kornegay, and J. A. Cooper, Jr., "Highly Resistive Layers by Vanadium Implantantation into 6H Silicon Carbide," 1995 International Semiconductor Device Research Symposium, Charlottesville, VA, December 6-8, 1995.

  7. W. Xie, J. A. Cooper, Jr., and M. R. Melloch, "Monolithic NMOS Digital Integrated Circuits in 6H-SiC," IEEE Electron Device Letters, Vol. 15, pp. 455-457, November 1994.

  8. W. Xie, J. A. Cooper, Jr., and M. R. Melloch, "Monolithic Digital Integrated Circuits in 6H-SiC," International Symposium on Compound Semiconductors, San Diego, CA, September 18-22, 1994.

  9. W. Xie, J. A. Cooper, Jr., and M. R. Melloch, "NMOS Digital Integrated Circuits in 6H Silicon Carbide," IEEE Device Research Conference, Boulder, CO, June 20-22, 1994.

  10. J. A. Cooper, Jr. and M. R. Melloch, "NMOS Digital Integrated Circuits in 6H Silicon Carbide," Workshop on Compound Semiconductor Devices and Materials (WOCSEMMAD '94), San Francisco, CA, February 21 - 23, 1994.

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Publications on SiC Material Science

  1. S. E. Saddow, J. Williams, T. Isaacs-Smith, M. A. Capano, J. A. Cooper, Jr., M. S. Mazzola, A. J. Hsieh, and J. B. Casaday, "High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching," Materials Science Forum , Vols. 338-342, pp. 901-904, 2000.

  2. M. A. Capano, J. A. Cooper, Jr., M. R. Melloch, A. Saxler, and W. C. Mitchell, "Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-SiC, " Materials Science Forum , Vols. 338-342, pp. 703-706, 2000.

  3. M. A. Capano, R. Santhakumar, R. Vengupol, M. R. Melloch, and J. A. Cooper, Jr., "Nitrogen and Phosphorus Implantation into 4H-Silcion Carbide," Journal of Electronic Materials, Vol. 26, No. 2, p. 210, February, 2000.

  4. S. E. Saddow, M. A. Capano, J. A. Cooper, M. S. Mazzola, and J. B. Casady, "High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching," International Conference on Silicon Carbide and Related Materials, Raleigh, NC, October 11 - 15, 1999.

  5. M. A. Capano, J. A. Cooper, Jr., M. R. Melloch, A. Saxler, and W. C. Mitchel, "Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide," International Conference on Silicon Carbide and Related Materials, Raleigh, NC, October 11 - 15, 1999.

  6. M. A. Capano, R. Santhakumar, M. K. Das, J. A. Cooper, and M. R. Melloch, "Phosphorus and Nitrogen Impantation into 4H-Silicon Carbide," Electronic Materials Conference, Santa Barbara, CA, June 30 - July 2, 1999.

  7. M. A. Capano, S. Ryu, J. A. Cooper, Jr., M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell, and D. E. Walker, Jr., "Surface Roughening in Ion Implanted 4H-Silicon Carbide," Journal of Electronic Materials, Vol. 28, No. 3, pp. 214-218, March, 1999.

  8. M. A. Capano, S-H. Ryu, J. A. Cooper, Jr., and M. R. Melloch, "Surface Morphology of Ion Implanted Silicon Carbide," Electronic Materials Conference, Charlottesville, VA, June 24 - 26, 1998.

  9. M. A. Capano, S-H. Ryu, M. R. Melloch, and J. A. Cooper, Jr., "Dopant Activation and Surface Morphology of Ion Implanted 4H- and 6H-Silicon Carbide," Journal of Electronic Materials, Vol. 27, No. 4, pp. 370-376, April, 1998.

  10. M. R. Melloch and J. A. Cooper, Jr., "Fundamentals of SiC Device Processing," (INVITED) MRS Bulletin, Vol. 22, pp. 42-47, March 1997.

  11. J. N. Pan, J. A. Cooper, Jr., and M. R. Melloch, "Activation of Nitrogen Implants in 6H-SiC," Journal of Electronic Materials, Vol. 26, pp. 208-211, March 1997.

  12. J. A. Cooper, Jr., "Critical Material and Processing Issues of SiC Electronic Devices," (INVITED) Third International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC '96), Freiburg, Germany, May 12-15, 1996.

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Publications on SiC MOS Characterization

  1. C.-Y. Lu, J. A. Cooper, Jr., T. Tsuji, G. Y. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, "Effect of Process Variations and Ambient Temperature on Electron Mobility at the SiO2/4H-SiC Interface," IEEE Transactions on Electron Devices , July, 2003.

  2. C.-Y. Lu, J. A. Cooper, Jr., G. Y. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, "Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities," Materials Science Forum , Vols. 389-393, pp. 977-980, 2002.

  3. C.-Y. Lu, J. A. Cooper, Jr., T. Tsuji, G. Y. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, "Temperature Dependence of Channel Mobility in Nitric Oxide Annealed MOSFETs on (0001) 4H-SiC," Electronic Materials Conference , Santa Barbara, CA, June 26 - 28, 2002.

  4. J. K. McDonald, A. Franceschetti, S. T. Pantelides, R. A. Weller, L. C. Feldman, G. Chung, C. C. Tin, J. R. Williams, C-Y. Lu, B. S. Um, J. A. Cooper, Jr., and M. K. Das, "The 4H-SiC/Si)2 Interface," Semiconductor Interface Specialists Conference , December, 2001.

  5. C.-Y. Lu, J. A. Cooper, Jr., G. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, "Effect of Process Variations on 4H Silicon Carbide MOSFET Mobility," International Conference on Silicon Carbide and Related Materials , Tsukuba, Japan, October 28 - November 2, 2001.

  6. J. A. Cooper, Jr., "Effect of Oxidation and Processing Conditions on the Electron Mobility in Inversion Layers on 4H-SiC," ONR Workshop on Physical Effects and Device/Circuit Interactions in Solid State Devices , Bar Harbor, ME, September 9-13, 2001.

  7. J. A. Cooper, Jr., "Interface Characterization and Transport Measurements in Silicon Carbide," [INVITED] Symposium on Semiconductor Physics and Devices, Osaka, Japan, July 6, 2001.

  8. I. A. Khan, B. Um, M. Matin, M. A. Capano, and J. A. Cooper, Jr., "Quality of Thermally Grown Oxide in 4H-SiC Over Nitrogen and Phosphorus Implanted Regions," in Materials Research Society Symposium Proceedings, A. Agarwal, M. Skowronski, J. A. Cooper, Jr., and E. Janzen, eds., Vol. 640, pp. H5.16.1-6, Materials Research Society, Warrendale, PA, 2001.

  9. R. N. Ghosh, S. Ezhilvalavan, B. Golding, S. M. Mukhopadhyay, N. Mahadev, P. Joshi, M. K, Das, and J. A. Cooper, Jr., "Profiling of the SiO2-SiC Interface Using X-Ray Photoelectron Spectroscopy," MRS Fall Meeting, Boston, MA, November 27 - December 1, 2000.

  10. M. K. Das, B. S. Um, and J. A. Cooper, Jr., "Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices," International Conference on Silicon Carbide and Related Materials, Raleigh, NC, October 11 - 15, 1999.

  11. G. G. Jernigan, R. E. Stahlbush, M. K. Das, J. A. Cooper, Jr., and L. A. Lipkin, "Interfacial Differences Between SiO2 Grown on 6H-SiC and on Si (100)," Applied Physics Letters, Vol. 74, No. 10, pp. 1448 - 1450, 8 March, 1999.

  12. M. M. Maranowski and J. A. Cooper, Jr., "Time-Dependent-Dielectric-Breakdown Measurements of Thermal Oxides on N-Type 6H-SiC," IEEE Transactions on Electron Devices,Vol. 46, No. 3, pp. 520 - 524, March 1999.

  13. M. M. Maranowski, J. A. Cooper Jr., and P. Gosavi, "A Time-Dependent Dielectric Breakdown (TDDB) Study of Thermally Grown SiO2 on 6H-SiC," Electronic Materials Conference, Charlottesville, VA, June 24 - 26, 1998.

  14. M. K. Das, J. A. Cooper, Jr., and M. R. Melloch, "Effect of Epilayer Characteristics and Processing Conditions on the Thermally Oxidized SiO2/SiC Interface," Journal of Electronic Materials, Vol. 27, No. 4, pp. 353-357, April, 1998.

  15. M. P. Lam, M. K. Das, J. N. Pan, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, "Effects of Nitrogen Implant Activation on the SiC/SiO2 Interface of 6H-SiC Self-Aligned NMOSFETS," IEEE Transactions on Electron Devices, Vol. 45, No. 2, pp. 565-567, February 1998.

  16. G. G. Jernigan, R. E. Stahlbush, L. Lipkin, M. Das, and J. Cooper, "Chemical and Compositional Analysis of the SiO2/SiC Interface by X-ray Photoelectron Spectroscopy and Sputter Depth Profiling," (poster) Semiconductor Interface Specialists Conf., Charleston, SC, December 1997.

  17. M. Mathur Maranowski and J. A. Cooper, Jr., "Long Term Reliability of Thermally Grown SiO2 on 6H-SiC," Semiconductor Interface Specialists Conf., Charleston, SC, December 1997.

  18. J. A. Cooper, Jr., "Issues in the MOS Passivation of SiC," (INVITED) 1997 Cornell Conference, Ithaca, NY, August 1997.

  19. J. A. Cooper, Jr., "Advances in SiC MOS Technology," (INVITED) Phyica Stat. Solidi (a), Special Review Issue on Silicon Carbide Technology, J. Choyke, W. Pensl, and H. Matsunami, Eds., Vol. 162, No. 1, pp. 305 - 320, July 1997.

  20. M. P. Lam, M. K. Das, J. N. Pan, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, "Effects of Nitrogen Implant Anneal on the SiC/SiO2 Interface for 6H-SiC Self-Aligned NMOS," Electronic Materials Conference, Ft. Collins, CO, June 25-27, 1997.

  21. J. A. Cooper, Jr., "Oxidation of SiC," (INVITED) American Physical Society March Meeting, Kansas City, MO, March 17-21, 1997.

  22. J. Tan, M. K. Das, J. A. Cooper, Jr., and M. R. Melloch, "Metal-Oxide-Semiconductor Capacitors Formed by Oxidation of Polysilicon on SiC," Applied Physics Letters, Vol. 17, pp. 2280-2281, April 28, 1997.

  23. D. C. Chappel, J. P. Smith, S. Taylor, W. Eccleston, M. K. Das, and J. A. Cooper, Jr., "High Frequency CV Characteristics of Plasma Oxidised Silicon Carbide," IEE Electronics Letters, Vol. 33, pp. 97-98, January 1997.

  24. W. Xie, J. N. Shenoy, S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., "The Effect of Thermal Processing on Polycrystalline Silicon / SiO2 / 6H-SiC Metal-Oxide-Semiconductor Devices," Applied Physics Letters, Vol. 68, pp. 2231-2233, 15 April 1996.

  25. J. N. Shenoy, M. K. Das, J. A. Cooper, Jr., M. R. Melloch, and J. W. Palmour, "Effect of Substrate Orientation and Crystal Anisotropy on the Thermally Oxidized SiO2/SiC Interface," Journal of Applied Physics, Vol. 79, No. 6, pp. 3042-3045, March 15, 1996.

  26. J. N. Shenoy, J. A. Cooper, Jr., and M. R. Melloch, "Comparison of Thermally Oxidized MOS Interfaces on 4H and 6H Polytypes of Silicon Carbide," Applied Physics Letters, Vol. 68, No. 5, pp. 803-805, February 5, 1996.

  27. J. N. Shenoy, L. A. Lipkin, G. L. Chindalore, J. Pan, J. A. Cooper, Jr., J. W. Palmour, and M. R. Melloch, "Electrical Characterization of the Thermally Oxidized SiO2/SiC Interface," Inst. Phys. Conf. Ser., No. 141, Ch. 4, pp. 449-454, 1995.

  28. J. A. Cooper, Jr., "Electrical Properties and Device Applications of Thermally Oxidized Silicon Carbide," (INVITED), 26th IEEE Semiconductor Interface Specialists Conf., Charleston, SC, December 7-12, 1995.

  29. J. N. Shenoy, G. L. Chindalore, M. K. Das, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and K. G. Irvine, "Recent Advances in Silicon Carbide MOS Technology," 6th International Conference on Silicon Carbide and Related Materials-1995, Kyoto, Japan, September 18-21, 1995.

  30. J. N. Pan, J. A. Cooper, Jr., and M. R. Melloch, "Extremely Long Capacitance Transients in 6H-SiC Metal-Oxide-Semiconductor Capacitors," Journal of Applied Physics, Vol. 78, pp., July 1995.

  31. J. N. Shenoy, M. K. Das, J. A. Cooper, Jr., M. R. Melloch, and J. W. Palmour, "Effect of Substrate Orientation on the Thermally Oxidized 6H-SiC MOS Interface," Electronic Materials Conference, Charlottesville, VA, June 1995.

  32. J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K. G. Irvine "Characterization and Optimization of the SiO2/SiC MOS Interface," Journal of Electronic Materials, Vol. 24, pp. 303-309, April 1995.

  33. J. N. Shenoy, L. A. Lipkin, G. L. Chindalore, J. Pan, J. A. Cooper, Jr., J. W. Palmour, and M. R. Melloch, "Electrical Characterization of the Thermally Oxidized SiO2/SiC Interface," International Symposium on Compound Semiconductors, San Diego, CA, September 18-22, 1994.

  34. J. W. Sanders, J. Pan, W. Xie, S. T. Sheppard, M. Mathur, J. A. Cooper, Jr., and M. R. Melloch, "MOS Characterization of Thermally Oxidized 6H Silicon Carbide," IEEE Device Research Conference, Santa Barbara, CA, June 21-23, 1993.


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Publications on SiC MOS Transistors

  1. M. A. Capano, J. Wan, M. R. Melloch, and J. A. Cooper, Jr., "N-Channel, 3C SiC MOSFETs on Silicon, " European Conference on Silicon Carbide and Related Materials , September 2002.

  2. J. Wan, M. A. Capano, M. R. Melloch, and J. A. Cooper, Jr., "Inversion Channel MOSFETs in 3C-SiC on Silicon," IEEE Lester Eastman Conference on High Performance Devices , Newark, DE, August 6 -- 8, 2002.

  3. J. Wan, M. A. Capano, M. R. Melloch, and J. A. Cooper, Jr., "N-Channel 3C-SiC MOSFET's on Silicon Substrate," (late news) Electronic Materials Conference , Santa Barbara, CA, June 26 - 28, 2002.

  4. M. K. Das, M. A. Capano, J. A. Cooper, and M. R. Melloch, "Effect of Implant Activation Annealing Conditions on the Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs," Electronic Materials Conference, Santa Barbara, CA, June 30 - July 2, 1999.

  5. M. K. Das, J. A. Cooper, Jr., M. R. Melloch, and M. A. Capano, "Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs," Semiconductor Interface Specialists Conference, San Diego, CA, December 3 - 5, 1998.

  6. M. P. Lam, M. K. Das, J. N. Pan, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, "Effects of Nitrogen Implant Activation on the SiC/SiO2 Interface of 6H-SiC Self-Aligned NMOSFETS,"IEEE Transactions on Electron Devices, Vol. 45, No. 2, pp. 565-567, February 1998.

  7. J. N. Pan, J. A. Cooper, Jr., and M. R. Melloch, "Thin-Oxide Silicon-Gate Self-Aligned 6H-SiC MOSFETs Fabricated with a Low-Temperature Source/Drain Implant Activation Anneal," IEEE Electron Device Letters, Vol. 18, No. 7, pp.349-351, July 1997.

  8. M. P. Lam, M. K. Das, J. N. Pan, K. T. Kornegay, J. A. Cooper, Jr., and M. R. Melloch, "Effects of Nitrogen Implant Anneal on SiC/SiO2 Interface for 6H-SiC Self-Aligned NMOS," Electronic Materials Conference, Ft. Collins, CO, June 25-27, 1997.

  9. J. A. Cooper, Jr., "Development of Silicon Gate Self-Aligned MOSFETs in SiC," Workshop on Compound Semiconductor Devices and Materials (WOCSEMMAD '96), Sante Fe, NM, February 19-21, 1996.

  10. J. N. Pan, J. A. Cooper, Jr., and M. R. Melloch, "Self-Aligned 6H-SiC MOSFET's with Improved Current Drive,"Electronics Letters, Vol. 31, pp. 1200-1201, July 1995.

  11. S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., "Characteristics of Inversion-Channel and Buried-Channel MOS Devices in 6H-SiC," IEEE Transactions on Electron Devices, Vol. 41, pp. 1257-1264, July 1994.

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Publications on SiC Charge Coupled Devices

  1. S. T. Sheppard, M. R. Melloch, and J. A. Cooper, Jr., "Experimental Demonstration of a Buried-Channel Charge-Coupled Device in 6H Silicon Carbide," IEEE Electron Device Letters, Vol. 17, No. 1, pp. 4-6, January 1996.

  2. S. T. Sheppard, J. A. Cooper, Jr., and M. R. Melloch, "Silicon Carbide Buried-Channel Charge-Coupled Devices," IEEE Device Research Conf., Charlottesville, VA, June 19-21, 1995.

  3. S. T. Sheppard, J. A. Cooper, Jr., and M. R. Melloch, "Non-Equilibrium Characteristics of the Gate-Controlled Diode in 6H-SiC," Journal of Applied Physics, Vol. 75, pp. 3205-3207, March 15, 1994.

  4. J. A. Cooper, Jr. and M. R. Melloch, "Silicon Carbide CCD UV Imagers for the 100-300 nm Regime," Inst. Phys. Conf. Ser., No. 137, Ch. 6, pp. 637-639, 1993.

  5. J. A. Cooper, Jr. and M. R. Melloch, "Silicon Carbide CCD UV Imagers for the 100 - 300 nm Regime," Int'l. Conf. on Silicon Carbide and Related Materials (poster session), Washington, DC, November 1-3, 1993.

  6. J. A. Cooper, Jr. and M. R. Melloch, "Charge Storage and Charge Transfer Devices in Silicon Carbide," 1992 ONR Workshop on SiC Materials and Devices, Charlottesville, VA, September 10-11, 1992.

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Publications on SiC Nonvolatile Memory

  1. J. A. Cooper, Jr., "Nonvolatile Random Access Memories in Wide Bandgap Semiconductors," book chapter in III-Nitrides, J. I. Pankove and T. D. Moustakas, eds., in the series on Semiconductors and Semimetals, E. Weber and R. Willardson, eds., Vol. 50, pp. 473 - 491, Academic Press, 1997.

  2. Y. Wang, J. A. Cooper, Jr., M. R. Melloch, S. T. Sheppard, J. W. Palmour, and L. A. Lipkin, "Experimental Characterization of Electron-Hole Generation in Silicon Carbide," Journal of Electronic Materials, Vol. 25, No. 5, pp. 899-907, May 1996.

  3. W. Xie, G. M. Johnson, Y. Wang, J. A. Cooper, Jr., J. W. Palmour, L. A. Lipkin, M. R. Melloch, and C. H. Carter, Jr., "Cell Design and Peripheral Logic for Nonvolatile Random Access Memories in 6H-SiC," Inst. Phys. Conf. Ser., No. 141, Ch. 4, pp. 395-398, 1995.

  4. Y. Wang, W. Xie, J. A. Cooper, Jr., M. R. Melloch, and J. W. Palmour, "Mechanisms Limiting Current Gain in 6H-SiC Bipolar Transistors,"6th International Conference on Silicon Carbide and Related Materials-1995, Kyoto, Japan, September 18-21, 1995.

  5. W. Xie, Y. Wang, M. R. Melloch, J. A. Cooper, Jr., G. M. Johnson, L. A. Lipkin, J. W. Palmour, and C. H. Carter, Jr., "Development of Nonvolatile Random Access Memories in 6H-SiC," 6th International Conference on Silicon Carbide and Related Materials-1995, Kyoto, Japan, September 18-21, 1995.

  6. Y. Wang, J. A. Cooper, M. R. Melloch, S. T. Sheppard, J. W. Palmour, and C. H. Carter, Jr., "Generation Mechanisms in 6H-SiC PN Junctions," Electronic Materials Conf., Charlottesville, VA, June 1995.

  7. W. Xie, G. M. Johnson, Y. Wang, J. A. Cooper, Jr., J. W. Palmour, L. A. Lipkin, M. R. Melloch, and C. H. Carter, Jr., "Cell Design and Peripheral Logic for Nonvolatile Random Access Memories in 6H-SiC," 21st International Symposium on Compound Semiconductors, San Diego, CA, September 18-22, 1994.

  8. W. Xie, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and C. H. Carter, Jr., "A Vertically Integrated Bipolar Storage Cell in 6H Silicon Carbide for Nonvolatile Memory Applications," IEEE Electron Device Letters, Vol. 15, pp. 212-214, June 1994.

  9. J. A. Cooper, Jr., "Nonvolatile Memories in Wide Bandgap Semiconductors," 1994 Spring Conf. on Solid-State Technologies, Pasadena, CA, May 23-25, 1994.

  10. J. A. Cooper, Jr., M. R. Melloch, W. Xie, J. W. Palmour, and C. H. Carter, Jr., "Progress and Prospects for Nonvolatile Memory Development in Silicon Carbide," Int'l. Conf. on Silicon Carbide and Related Materials, Washington, DC, November 1-3, 1993.

  11. J. A. Cooper, Jr., M. R. Melloch, W. Xie, J. W. Palmour, and C. H. Carter, Jr. "Progress and Prospects for Nonvolatile Memory Development in Silicon Carbide," Inst. Phys. Conf. Ser. No. 137, Ch. 7, pp. 711-714, 1993.

  12. C. T. Gardner, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and C. H. Carter, Jr., "Electrical Characterization of PiN Diode Structures in 6H-SiC," Springer Proceedings in Physics, Vol 71: Amorphous and Crystalline Silicon Carbide IV, C. Y. Yang, M. M. Rahman, and G. L. Harris, Eds., pp. 338-343, Springer-Verlag, Berlin, 1992.

  13. C. T. Gardner, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and C. H. Carter, Jr., "Dynamic Charge Storage in 6H-SiC", Applied Physics Letters, Vol. 61, pp.1185-1186, 7 September, 1992.

  14. J. A. Cooper, Jr., J. W. Palmour, C. T. Gardner, M. R. Melloch, and C. H. Carter, Jr., "Dynamic Charge Storage in 6H-Silicon Carbide: Prospects for High-Speed Nonvolatile RAM's," IEEE Device Research Conference, Boston, MA, June 22-24, 1992.

  15. J. A. Cooper, Jr., J. W. Palmour, C. T. Gardner, M. R. Melloch, and C. H. Carter, Jr., "Bulk and Perimeter Generation in 6H-SiC Diodes," 1991 International Semiconductor Device Research Symposium, Charlottesville, VA, December 4-6, 1991.

  16. C. T. Gardner, J. A. Cooper, Jr., M. R. Melloch, J. W. Palmour, and C. H. Carter, Jr., "Electrical Characterization of PiN Diode Structures in 6H-SiC," 4th International Conference on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials, Santa Clara, CA, October 10-11, 1991.

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Publications on SiC Velocity-Field Measurements

  1. J. A. Cooper, Jr., "Interface Characterization and Transport Measurements in Silicon Carbide," [INVITED] Symposium on Semiconductor Physics and Devices, Osaka, Japan, July 6, 2001.

  2. I. A. Khan and J. A. Cooper, Jr., "Improved Measurements of High-Field Drift Velocity in Silicon Carbide," Materials Science Forum , Vols. 338-342, pp. 761-764, 2000.

  3. I. A. Khan and J. A. Cooper, Jr., "Measurement of High-Field Electron Transport in Silicon Carbide," IEEE Transactions on Electron Devices, Vol. 47, No. 2, pp. 269-273, February, 2000.

  4. I. A. Khan and J. A. Cooper, Jr., "Improved Measurements of High-Field Drift Velocity in Silicon Carbide," International Conference on Silicon Carbide and Related Materials, Raleigh, NC, October 11 - 15, 1999.

  5. I. A. Khan and J. A. Cooper, Jr., "Measurements of Electron Drift Velocity in 4H- and 6H-SiC," International Conference on Silicon Carbide and III-V Nitrides, Stockholm, Sweden, Aug. 31 - Sept. 5, 1997.

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